Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 288-291

  Marsh, Steve P ^a  

^a Marconi Caswell Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; TEMPERATURE MEASUREMENT;

POWER TRANSISTORS; THERMAL IMPEDANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033880212     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822269     Document Type: Article

References (7)

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2. M. G. Adlerstein and M. P. Zaitlin, "Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 38, pp. 1553-1554, June 1991.
3. D. E. Dawson, A. K. Gupta, and M. L. Salib, "CW measurement of HBT thermal resistance," IEEE Trans. Electron Devices, vol. 39, pp. 2235-2239, Oct. 1992.
4. J. R. Waldrop, K. C. Wang, and P. M. Asbeck, "Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement," IEEE Trans. Electron Devices, vol. 39, pp. 1248-1250, May 1992.
5. W. Liu and A. Yuksel, "Measurement of junction temperature of AlGaAs/GaAs heterojunction bipolar transistors operating at large power densities," IEEE Trans. Electron Devices, vol. 42, pp. 358-360, Feb. 1995.
6. W. Liu, H.-F. Chau, and E. Beam, III, "Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 388-395, Mar. 1996.
7. N. Bovolon etal., "A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, pp. 1846-1848, Aug. 1998.