0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 83-84

  Dumka, D C ^a   Cueva, G ^a   Hoke, W E ^a   Lemonias, P J ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYZERS; FREQUENCIES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TRANSCONDUCTANCE;

METAMORPHIC MATERIAL; SEMICONDUCTING INDIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033652721     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)