Reliability of metamorphic HEMTs on GaAs substrates

Microelectronics Reliability

Volumn 42, Issue 7, 2002, Pages 997-1002

  Marsh, P F ^a   Whelan, C S ^a   Hoke, W E ^a   Leoni III, R E ^a   Kazior, T E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SIGNAL RECEIVERS;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036641227     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00063-X     Document Type: Conference Paper

References (16)

1. GaAs metamorphic HEMT (MHEMT): An attractive alternative to InP HEMTs for high performance low noise and power applications
2. Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates
3. Fluorine diffusion and accumulation in Si step-doped InAlAs layers
4. Optimization of ohmic contacts on lattice-matched and pseudomorphic AlInAs/InGaAs/InP
5. 0.47As modulation-doped structures obtained by halogen lamp annealing
6. Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation
7. Reliability of 0.1 μm InP HEMTs
8. Metamorphic InAlAs/InGaAs HEMT MMIC technology on GaAs substrate: From promise to reality
9. Reliability of passivated 0.15 mm InAlAs-InGaAs HEMTs with pseudomorphic channel
10. Manufacturable 0.15 mm InP-based HEMT MMIC process with high yield and reliability on 2″ InP substrate
11. Low- noise bias reliability of AlInAs/GaInAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates
12. Low noise bias reliability of AlInAs/InGaAs modulation doped field effect transistors with linearly graded low-temperature buffer layers grown on GaAs substrates
13. Hydrogen degradation in InP HEMTs
14. Bulk and surface effects of hydrogen treatment on Al/Ti-Gate AlGaAs/GaAs power HFETs
15. Ti-gate metal induced pHEMT degradation in hydrogen