A geometrical model of GaN morphology in initial growth stage

Journal of Crystal Growth

Volumn 234, Issue 1, 2002, Pages 115-120

  Yuan, Hairong ^a   Chen, Zhen ^a   Lu, Da Cheng ^a   Liu, Xianglin ^a   Han, Peide ^a   Wang, Xiaohui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Atomic force microscopy; A1. Computer simulation; A1. Crystal morphology; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; STATISTICAL METHODS;

CRYSTAL MORPHOLOGY;

GALLIUM NITRIDE;

EID: 0036129778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01668-2     Document Type: Article

References (11)