Low pressure chemical vapor deposition of Si1-xGex films using Si2H6 and GeH4 source gases

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 363-367

  Kim, Jin Won ^a   Ryu, Myung Kwan ^a   Kim, Ki Bum ^a   Kim, Sang Joo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DESORPTION; FILM GROWTH; GERMANIUM COMPOUNDS; GRAIN SIZE AND SHAPE; HYDROGEN; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SURFACES;

ARRHENIUS PLOT; DEPOSITION TEMPERATURE; GERMANIUM HYDRIDE; HYDROGEN DESORPTION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON GERMANIDE;

THIN FILMS;

EID: 0029732932     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836438     Document Type: Article

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