Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-μm CMOS devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 397-400

  Ohnishi, Kazuhiro ^a   Yamamoto, Naoki ^a   Uchino, Takashi ^a   Hanaoka, Yuko ^a   Tsuchiya, Ryuta ^a   Nonaka, Yusuke ^a   Tanabe, Yoshikazu ^a   Umezawa, Tadashi ^a   Fukuda, Naoki ^a   Mitani, Shinichiro ^a   Shiba, Takeo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; GATES (TRANSISTOR); HYDROGEN; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON;

GATE OXIDE INTEGRITY (GOI); WET HYDROGEN OXIDATION;

CMOS INTEGRATED CIRCUITS;

EID: 17344379146     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)