Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells: Effect of low temperature heat treatment in N2

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3944, Issue , 2000, Pages

  Potter, Richard J ^a   Balkan, Naci ^a   Adams, Mike J ^a   Chalker, Paul R ^a   Joyce, Tim B ^a   Bullough, Tim J ^a  

^a UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

POST-GROWTH TREATMENT TECHNIQUES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033713004     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)