Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3

Materials Science and Engineering B

Volumn 57, Issue 3, 1999, Pages 218-223

  Wang, H Y ^a   Huang, S C ^a   Yan, T Y ^a   Gong, J R ^a   Lin, T Y ^b   Chen, Y F ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

GaN films; NH3; Sapphire substrates; Trimethylgallium

Indexed keywords

AMMONIA; DEPOSITION; FILM GROWTH; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DOUBLE-CRYSTAL ROCKING CURVE X-RAY DIFFRACTION (DCXRD); GALLIUM NITRIDE; TRIMETHYLGALLIUM;

SEMICONDUCTING FILMS;

EID: 0001527454     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00429-2     Document Type: Article

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