Effect of selective hydrogen pretreatment on the characteristics of AlGaAs/InGaAs p-HEMTs

Journal of the Korean Physical Society

Volumn 42, Issue 2, 2003, Pages 281-284

  Kang, I H ^a   Kim, J H ^a   Song, H J ^a   Song, J I ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Breakdown voltage; GaAs HEMT; Hydrogen; Noise; Threshold voltage

Indexed keywords

EID: 0037297549     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

1. Tsugunori Okumura, GaAs Mantech (1999).
2. W. B. Choi, C. M. Ju, J. S. Lee and M. Y. Sung, J. Korean Phys. Soc. 37, 878 (2000).
3. Dwayne Ragle and Sammy Kayali, GaAs Reliability Workshop (Anaheim, Oct., 1997), p. 66.
4. P. C. Chao, M. Y. Kao, K. Nordheden and A. W. Swanson, IEEE Trans. Elec. Dev. Lett. 15, 151 (1994).
5. David C. Eng and John Scarpulla, GaAs Reliability Workshop (Monterey, Oct., 1999), p. 89.
6. Issac López-Fernández, J. D. G. Puyol, O. J. Homan and A. B. Cancio, IEEE Trans. Microwave and Guided Wave Lett. 19, 413 (1999).
7. M. Chertouk, M. Dammann, K. Kohler and G. Weimann, IEEE Trans. Elec. Dev. Lett. 21, 97 (2000).
8. J. H. Kim and J.-I. Song, J. Korean Phys. Soc. 38, 142 (2001).
9. R. G. Pereira and M. Van Hove, J. Vac. Sci. Technol. B 14, 1773 (1996).
10. M. D. Kim, H. S. Park, T. I. Kim, J. Y. Lee, Y. H. Kwon, D. Y. Kim and H. Y. Cho, IEEE Int. Symp. On Compound Semiconductors (San Diego, Sep., 1997), p. 307.
11. J. Pearton, W. Corbett and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).
12. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).