Characterization of low-frequency noise behavior of MBE-grown InGaP/InGaAs p-HEMTs

Journal of the Korean Physical Society

Volumn 38, Issue 2, 2001, Pages 142-145

  Kim, J H ^a   Song, J I ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035532446     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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