|
|
Volumn , Issue , 1997, Pages 307-310
|
|
Hydrogenation effect of InGaP grown on GaAs by molecular beam epitaxy
a a a b b b b |
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
GALLIUM ARSENIDE;
HYDROGENATION;
III-V SEMICONDUCTORS;
MOLECULAR BEAM EPITAXY;
PASSIVATION;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR ALLOYS;
ATOMIC HYDROGEN;
DEFECT PASSIVATION;
HYDROGENATION EFFECTS;
LATTICE-MATCHED;
RECOMBINATION CENTERS;
RECTIFYING CHARACTERISTICS;
SCHOTTKY DIODES;
PHOSPHORUS COMPOUNDS;
|
|
EID: 0012440127
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISCS.1998.711642 Document Type: Conference Paper |
|
Times cited : (2)
|
|
References (6)
|
