InGaAsN/GaAs QD and QW structures grown by MOVPE

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 343-347

  Daniltsev, V M ^a   Drozdov, M N ^a   Drozdov, Yu N ^a   Gaponova, D M ^a   Khrykin, O I ^a   Murel, A V ^a   Shashkin, V I ^a   Vostokov, N V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

A1. Nitrogen incorporation; A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; A3. Quantum dots; A3. Quantum wells; B1. GaInAsN

Indexed keywords

OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

STRUCTURAL PROPERTIES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037292180     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01923-1     Document Type: Conference Paper

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