In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 223-228

  Lee, Jae Woo ^a   Kang, In Ho ^a   Kang, Shin Jae ^a   Jo, Seong June ^a   In, Soo Kang ^a   Song, Ho Jin ^a   Song, Jong In ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Compound source molecular beam epitaxy; GaAs oxidation; Gate oxide layer; InGaP InGaAs GaAs p HEMTs; Off state breakdown voltage; On state breakdown voltage

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LIQUID PHASE OXIDATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037290264     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00198-3     Document Type: Conference Paper

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