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Volumn , Issue , 1998, Pages 99-102
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Drain barrier lowering in HEMTs
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
ELECTRIC CONDUCTANCE;
ELECTRIC NETWORK PARAMETERS;
ELECTRIC POTENTIAL;
GATES (TRANSISTOR);
SEMICONDUCTOR DEVICE MODELS;
DRAIN BARRIER LOWERING;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0032320671
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (3)
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