Suppression of drain conductance frequency dispersion in InP-based HEMTs by eliminating hole accumulation

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 167-168

  Arai, T ^a   Sawada, K ^a   Okamoto, N ^a   Makiyama, K ^a   Takahashi, T ^a   Hara, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Bit rate; Capacitance; HEMTs; Impact ionization; Laboratories; MODFETs; Ohmic contacts; Optical fiber communication; Optical fiber dispersion; Radio frequency

Indexed keywords

CAPACITANCE; ELECTRIC CONTACTORS; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT IONIZATION; LABORATORIES; MODFETS; OHMIC CONTACTS; OPTICAL COMMUNICATION; OPTICAL FIBERS;

BAND DISCONTINUITIES; BIT RATES; DRAIN CONDUCTANCE; FREQUENCY DISPERSION; HOLE ACCUMULATION; OPTICAL FIBER DISPERSION; PLANAR-STRUCTURE DEVICES; RADIO FREQUENCIES;

OPTICAL FIBER COMMUNICATION;

EID: 49549100809     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029578     Document Type: Conference Paper

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