Application of CCl2F2- and CCl4-based plasmas for RIE of GaSb and related materials

Vacuum

Volumn 56, Issue 1, 2000, Pages 57-61

  Piotrowska, A ^a   Kaminska E ^a   Piotrowski, T T ^a   Guziewicz, M ^a   Golaszewska, K ^a   Papis, E ^a   Wrobel J ^b   Perchuc L ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON TETRACHLORIDE; DIFFRACTION GRATINGS; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIC ANTIMONIDE; GALLIUM ANTIMONIDE; INDIUM GALLIUM ARSENIC ANTIMONIDE; MID-INFRARED PHOTONIC DEVICES;

PLASMA ETCHING;

EID: 0343526876     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00166-9     Document Type: Article

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