Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 928-935

  Lee, Lurng Shehng ^b   Liao, Chungpin ^c   Lee, Chung Len ^a,d   Huang, Tzuen His ^c   Tang, Denny Duan Lee ^c   Duh, Ting Shien ^b   Yang, Tsing Tyan ^b  

^a IEEE

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Aluminum mask; Annealing; Flatband shift; Proton bombardment; RF IC

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; ION BOMBARDMENT; MASKS; PROTONS; Q FACTOR MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE;

FLATBAND SHIFT; PROTON BOMBARDMENT; PROTON DIRECT-WRITE ON WAFERS; PROTON RADIATION; RADIATION MASKS;

SILICON WAFERS;

EID: 0035340555     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918241     Document Type: Article

References (17)