A high-performance polycrystalline silicon thin-film transistor using metal-induced crystallization with Ni solution

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7193-7197

  Yoon, Soo Young ^a   Kim, Sung Ki ^a   Oh, Jae Young ^a   Choi, Young Jin ^a   Shon, Woo Sung ^a   Kim, Chae Ok ^b   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Crystallization; Metal induced crystallization; MIC; Poly Si; Thin film transistor

Indexed keywords

EID: 0001546569     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7193     Document Type: Article

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