Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 61-64

  Nigam, S ^a   Kim, Jihyun ^a   Luo, B ^a   Ren, F ^a   Chung, G Y ^b   Pearton, S J ^c   Williams, J R ^d   Shenai, K ^e   Neudeck, P ^f  

^a University of Florida   (United States)

^b Sterling Semiconductor   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d AUBURN UNIVERSITY   (United States)

^e UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^f NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON MOBILITY; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON CARBIDE;

TURN-ON VOLTAGE;

SOLID STATE RECTIFIERS;

EID: 0037211140     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00272-1     Document Type: Article

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