Fabrication of mesoscopic devices using atomic force macroscopic electric field induced oxidation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 162-167

  Lee, F K ^a   Wen, G H ^a   Zhang, X X ^a   Tsui, O K C ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD EFFECTS; ELECTRON DEVICES; ETCHING; MATERIALS TESTING; OXIDATION; SCANNING TUNNELING MICROSCOPY; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES; TITANIUM;

ELECTRIC FIELD INDUCED OXIDATION; MESOSCOPIC DEVICES; PERCOLATING NETWORKS; SINGLE ELECTRON TRANSISTORS;

NANOTECHNOLOGY;

EID: 0037207707     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1537712     Document Type: Article

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