Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy

Applied Surface Science

Volumn 201, Issue 1-4, 2002, Pages 1-8

  Girard, P ^a   Titkov, A N ^b   Ramonda, M ^a   Evtikhiev, V P ^b   Ulin, V P ^b  

^a UNIV MONTPELLIER   (France)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

AFM instrumentation; Electrical properties; Nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NITROGEN; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ELECTROSTATIC FORCE MICROSCOPY;

SURFACE REACTIONS;

EID: 0037202634     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00213-1     Document Type: Article

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