Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions

Vacuum

Volumn 57, Issue 2, 2000, Pages 201-207

  Berkovits, V L ^a   L'Vova, T V ^a   Ulin, V P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; ENERGY GAP; MONOLAYERS; NITROGEN; PASSIVATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS; THIN FILMS;

CHEMICAL NITRIDATION; CHEMICAL REASONINGS; HYDRAZINE SULFIDE WATER SOLUTION; SURFACE PASSIVATION;

SURFACE TREATMENT;

EID: 0034188097     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00126-3     Document Type: Article

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