Nanometer-scale wires of monolayer height alkanethiols on AlGaAs/GaAs heterostructures by selective chemisorption

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 B, 1996, Pages

  Ohno, Hirotaka ^a   Nagahara, Larry Akio ^a   Gwo, Shangjr ^a   Mizutani, Wataru ^a   Tokumoto, Hiroshi ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMISORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; MOLECULAR STRUCTURE; MONOLAYERS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; WIRE;

CLEAVED SURFACES; MONOLAYER HEIGHT ALKANETHIOLS; NANOMETER SCALE WIRES; OCTADECANETHIOL; SCANNING PROBE MICROSCOPY; SELF ASSEMBLED MONOLAYER;

HETEROJUNCTIONS;

EID: 0030123297     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l512     Document Type: Article

References (12)