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Volumn 258-263, Issue pt 2, 1997, Pages 677-1292
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Proceedings of the 1997 19th International Conference on Defects in Semiconductors, ICDS-19. Part 2 (of 3)
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL IMPURITIES;
CRYSTAL LATTICES;
CRYSTAL SYMMETRY;
DIAMOND FILMS;
RADIATION DAMAGE;
SEMICONDUCTING DIAMONDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SILICON CARBIDE;
ALPHA RADIATION INDUCED DEEP LEVELS;
ANTISITES;
EIREV;
GALLIUM NITRIDE;
INTRINSIC MODULATION DOPING;
POSITRON ANNIHILATION SPECTROSCOPY;
SILICON VACANCY;
TRANSITION METAL DEFECTS;
VACANCY TYPE DEFECTS;
ZEEMAN EFFECT;
SEMICONDUCTOR MATERIALS;
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EID: 0031349420
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Review |
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Times cited : (5)
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References (0)
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