Impurity incorporation during sublimation growth of 6H bulk SiC

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1024-1027

  Schulz, D ^a   Wagner, G ^a   Dolle, J ^a   Irmscher, K ^a   Muller T ^a   Rost, H J ^a   Siche, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COPPER; CRYSTAL GROWTH; IMPURITIES; IRON; NICKEL; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SUBLIMATION; TUNGSTEN; VANADIUM;

IMPURITY CONCENTRATION; INDUCTIVELY COUPLED PLASMA SPECTROSCOPY; POLYTYPE; SILICON CARBIDE CRYSTAL GROWTH TECHNOLOGY; SUBLIMATION GROWTH;

SINGLE CRYSTALS;

EID: 0033514579     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01038-0     Document Type: Article

References (4)

1. J. Heindl, H.P. Strunk, V.D. Heydemann, G. Pensl, Phys. Stat. Sol. A 162 (1997) 251.
2. R.C. Glass, G. Augustine, V. Balakrishna, H.McD. Hobgood, R.H. Hopkins, J. Jenny, M. Skowronski, W.J. Choyke, Inst. Phys. Conf. Ser. 142 (1996) 37.
3. H.N. Jayatirtha, M.G. Spencer, C. Taylor, W. Greg, J. Crystal Growth 174 (1997) 662.
4. W. Suttrop, G. Pensl, W.J. Choyke, R. Stein, S. Leibenzeder, J. Appl. Phys. 72 (8) (1992) 3708.