Simulation of silicon dry etching through a mask in low pressure fluorine-based plasma

Vacuum

Volumn 47, Issue 12, 1996, Pages 1473-1477

  Knizikevicius R ^a   Galdikas, A ^a,b   Grigonis, A ^a   Pranevicius L ^b   Rutkuniené, Ž ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^b VYTAUTAS MAGNUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANISOTROPY; COMPUTER SIMULATION; DESORPTION; DRY ETCHING; FLUOROCARBONS; ION BEAMS; ION BOMBARDMENT; MASKS; MONOLAYERS; PLASMAS; SPUTTERING;

FLUOROCARBON PLASMAS; MONOLAYERS STOCHASTIC MIXING;

SILICON;

EID: 0030382421     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(96)00223-0     Document Type: Article

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