Direct imaging of the depletion region of an InP p-n junction under bias using scanning voltage microscopy

Applied Physics Letters

Volumn 81, Issue 26, 2002, Pages 5057-5059

  Ban, D ^a,c   Sargent, E H ^a   Dixon Warren, St J ^b   Calder, I ^b   SpringThorpe, A J ^b,c   Dworschak, R ^b   Este, G ^b   White, J K ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b NORTEL NETWORKS   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTROSTATICS; SEMICONDUCTOR JUNCTIONS;

SCANNING VOLTAGE MICROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037164788     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528277     Document Type: Article

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