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Volumn 32, Issue 4, 1998, Pages 412-416

Electric and photoelectric properties of n-GaxIn1-xN/p-Si anisotypic heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000539088     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187407     Document Type: Article
Times cited : (5)

References (18)
  • 15
    • 0039502734 scopus 로고    scopus 로고
    • Inventor's Certificate SSSR No. 1436762; Patent No. 4210081, March 11, 1987
    • S. E. Aleksandrov and V. A. Kryakin, Inventor's Certificate SSSR No. 1436762; Patent No. 4210081, March 11, 1987.
    • Aleksandrov, S.E.1    Kryakin, V.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.