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Volumn 35, Issue 20, 2002, Pages
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Photoelastic study of stress field under thin oxide film edge in silicon and the validity of the concentrated force model
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
FILM GROWTH;
MATHEMATICAL MODELS;
NUMERICAL METHODS;
PHOTOLITHOGRAPHY;
SEMICONDUCTOR DEVICE STRUCTURES;
SILICA;
STRESSES;
SUBSTRATES;
THIN FILMS;
CONCENTRATED FORCE MODEL;
INFRARED PHOTOELASTIC METHOD;
OXIDE FILM STRIPE;
SILICON DIOXIDE THIN FILM;
THIN FILM EDGE;
THIN OXIDE FILM;
PHOTOELASTICITY;
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EID: 0037152692
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/35/20/101 Document Type: Article |
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Times cited : (5)
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References (13)
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