Measurement of bonding stress in silicon high power device structures by infrared photoelasticity method

Materials Research Society Symposium - Proceedings

Volumn 563, Issue , 1999, Pages 303-308

  Peng, H J ^a   Wong, S P ^a   Lau, W F ^a   Ke, N ^a   Zhao, Shounan ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; PHOTOELASTICITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; STRESSES; SUBSTRATES;

BONDING STRESS; HIGH POWER DEVICES; INFRARED PHOTOELASTICITY METHOD;

ELECTRIC CONTACTS;

EID: 0033285019     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-563-303     Document Type: Article

References (14)

1. P.H. Townsend, D.M. Barnett, T.A. Brunner, J. Appl. Phys. 62, 4438 (1987).
2. J.H. Jou, L. Hsu, J. Appl. Phys. 69, 1384 (1991).
3. K. Nakajima, J. Crystal Growth 121, 278 (1992).
4. L.B. Freund, J. Crystal Growth 132, 341 (1993).
5. J.M. Freitag, B.M. Clemens, Appl. Phys. Lett. 73, 43 (1998).
6. H. Kotake, Shin. Takasu, J. Mater. Sci. 15, 895 (1980).
7. Huang Lan, Liang Hancheng, Zhao Shounan, Chin. J. Infrared and Millimeter Waves 8, 203 (1989).
8. H. Liang, Y. Pan, S. Zhao, G. Qin, K.K. Chin, J. Appl. Phys. 71, 2863 (1992).
9. S.P. Wong, L. Huang, W.S. Guo, W.Y. Cheung, Shounan Zhao, Mat. Res. Soc. Symp. Proc. 436, 239 (1997).
10. S.P. Wong, W.Y. Cheung, N. Ke, M.R. Sajan, W.S. Guo, L. Huang, Shounan Zhao, Materials Chemistry and Physics 51 (1997) 157.
11. Zhang F. F, The Interlaminar Stresses in Composite Materials, (Higher Educational Publishing House, Beijing 1993).
12. H. Aben, C. Guilleme, Photoelasticity of Glass, Springer-Verlag, Berlin, 1993.
13. U.A. Brantley, J. Appl. Phys. 44, 534 (1973).
14. th Ed., CRC Press, 1998.