IR photoelasticity study of stress distribution in silicon under thin film structures

Materials Chemistry and Physics

Volumn 51, Issue 2, 1997, Pages 157-162

  Wong, S P ^a   Cheung, W Y ^a   Ke, N ^a   Sajan, M R ^a   Guo, W S ^a   Huang, L ^b   Zhao, Shounan ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Photoelasticity; Stress; Thin film

Indexed keywords

PHOTOELASTICITY; STRESS ANALYSIS; STRESS CONCENTRATION; SUBSTRATES; THIN FILMS;

INFRARED PHOTOELASTICITY METHOD;

SEMICONDUCTING SILICON;

EID: 0031270625     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80286-6     Document Type: Article

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