Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13169-13177

  Arguirov, Tz ^a   Seifert, W ^a,b   Kittler, M ^a,b   Reif, J ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; PHOTOLUMINESCENCE; TEMPERATURE;

ELECTRON BEAM INDUCED CURRENT RECOMBINATION BEHAVIOUR; SOLAR GRADE SILICON;

SILICON;

EID: 0037122121     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/365     Document Type: Article

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