Origin and efficiency of dislocation luminescence in Si and its possible application in optoelectronics

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 23-32

  Steinman, E A ^a   Kveder, V V ^a   Vdovin, V I ^b   Grimmeiss, H G ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b Inst Chem Prob of Microlectron   (Russian Federation)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LUMINESCENCE; MICROELECTRONICS; SEMICONDUCTING SILICON;

RADIATION BANDS;

LIGHT EMITTING DIODES;

EID: 0032655697     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.23     Document Type: Article

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