Low drive voltage (1.5Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE

Electronics Letters

Volumn 32, Issue 2, 1996, Pages 109-111

  Yamazaki, H ^a   Sakata, Y ^a   Yamaguchi, M ^a   Inomoto, Y ^a   Komatsu, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Electroabsorption modulators; Integrated optoelectronics; Semiconductor junction lasers; Vapour phase epitaxial growth

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; LIGHT MODULATORS; LIGHT SOURCES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP ENERGY; DOPING PROFILE; ELECTROABSORPTION MODULATORS; QUANTUM CONFINED STARK EFFECT; SEMICONDUCTOR JUNCTION LASERS; VAPOR PHASE EPITAXIAL GROWTH;

SEMICONDUCTOR LASERS;

EID: 0029777129     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960092     Document Type: Article

References (6)

1. KATO, T., SASAKI, T., KOMATSU, K., and MITO, I.: 'DFB-LD/ modulator integrated light source by bandgap energy controlled selective MOVPE', Electron. Lett., 1992, 28, (2), pp. 153-154
2. YAMAGUCHI, M., KATO, T., SASAKI, T., KOMATSU, K., and KITAMURA, M.: 'Penalty-free (<0.2dB) 2.5Gb/s transmission requirements for modulator-integrated DFB-LDs'. Proc. European Conf. Opt. Commun. (ECOC'94), September 1994, pp. 977-980
3. KOMATSU, K., KATO, T., SASAKI, T., YAMAGUCHI, M., TAKANO, S., SHIMIZU, H., WATANABE, N., and KITAMURA, M.: 'DFB-LD/ modulator integrated light sources fabricated by band-gap-energy-controlled selective MOVPE with stable fiber transmission characteristics'. February 1994, pp. 8-9
4. AOKI, M., SUZUKI, M., and TAKAHASHI, M.: 'High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure'. Proc. 13th IEEE Int. Semiconductor Laser Conf., September 1992, pp. 166-167
5. RAMDANE, A., OUGAZZDEN, A., DEVAUX, F., DELORME, F., SCHNEIDER, M., LANDREAU, J., and GLOUKHIAN, A.: 'Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer'. Proc. 14th IEEE Int. Semiconductor Laser Conf., September 1994, pp. 39-40
6. BASTARD, G., MENDEZ, E., CHANG, L., and ESAKI, L.: 'Variational calculations on a quantum well in an electric field', Phys. Rev., 1983, B28, pp. 3241-3245