A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5275-5282

  Lue, Hang Ting ^a   Tseng, Tseung Yuen ^a   Huang, Guo Wei ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BST THIN FILMS; C-V MEASUREMENT; CPW TRANSMISSION LINE; DIELECTRIC THIN FILMS; INTERFACE LAYER; INTERFACIAL PROPERTY; METAL INSULATOR SEMICONDUCTOR STRUCTURES; PHASE CHANGE; RF-MAGNETRON SPUTTERING; SILICON SUBSTRATES; THRU REFLECT LINES; TIO;

CAPACITANCE; GATE DIELECTRICS; MAGNETRON SPUTTERING; MICROWAVE MEASUREMENT; MIS DEVICES; THIN FILMS;

COPLANAR WAVEGUIDES;

EID: 0037091699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459603     Document Type: Article

References (26)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). jap JAPIAU 0021-8979
2. E. Tokumitsu, R. I. Nakamura, and H. Ishiwara, IEEE Electron Device Lett. 18, 160 (1997). edl EDLEDZ 0741-3106
3. D. A. Chang, P. Lin, and T. Y. Tseng, J. Appl. Phys. 78, 7103 (1995). jap JAPIAU 0021-8979
4. H. F. Luan, S. J. Lee, C. H. Lee, S. C. Song, Y. L. Mao, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 1999, 141 (1999). tcd TDIMD5 0163-1918
5. X. Guo, X. Wang, Z. Luo, T. P. Ma, and T. Tamagawa, Tech. Dig.-Int. Electron Devices Meet. 1999, 137 (1999). tcd TDIMD5 0163-1918
6. K. Eisenberg et al., Appl. Phys. Lett. 76, 1324 (2000). apl APPLAB 0003-6951
7. A. Srivastava, V. Craciun, J. M. Howard, and R. K. Singh, Appl. Phys. Lett. 75, 3002 (1999). apl APPLAB 0003-6951
8. S. Jun, Y. S. Kim, J. Lee, and Y. W. Kim, Appl. Phys. Lett. 78, 2542 (2001). apl APPLAB 0003-6951
9. E. Tokumitsu, G. Fujii, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 39, 2125 (2000). jjb JAPNDE 0021-4922
10. S. Otani, M. Kimura, and N. Sasaki, Appl. Phys. Lett. 63, 1889 (1993). apl APPLAB 0003-6951
11. H. T. Lue and T. Y. Tseng, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 48, 1640 (2001). itu ITUCER 0885-3010
12. J. F. Scott, D. Galt, J. C. Price, J. A. Beall, R. H. Ono, C. A. P. Dearaujo, and L. D. Mcmillan, Integr. Ferroelectr. 6, 189 (1995). itf IFEREU 1058-4587
13. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000), Chap. 13.
14. F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, C. H. Mueller, and J. D. Warner, Integr. Ferroelectr. 34, 247 (2001). itf IFEREU 1058-4587
15. G. F. Engen and C. A. Hoer, IEEE Trans. Microwave Theory Tech. 27, 897 (1979). iem IETMAB 0018-9480
16. A. R. Forouhi and I. Bloomer, Phys. Rev. B 38, 1865 (1988). prb PRBMDO 0163-1829
17. E. Carlsson and S. Gevorgian, IEEE Trans. Microwave Theory Tech. 47, 1544 (1999). iem IETMAB 0018-9480
18. C. M. Jackson, T. Pham, Z. Zhang, A. Lee, and C. Pettiete-Hall, IEEE MTT-S Int. Microwave Symp. Dig. 3, 1439 (1995). 8uk IMIDDM 0149-645X
19. H. S. Gamble, B. M. Armstrong, S. J. N. Mitchell, Y. Wu, V. F. Fusco, and J. A. C. Stewart, IEEE Microwave Guid. Wave Lett. 9, 395 (1999). img IMGLE3 1051-8207
20. Y. Wu, H. S. Gamble, B. M. Armstrong, V. F. Fusco, and J. A. C. Stewart, IEEE Microwave Guid. Wave Lett. 9, 10 (1999). img IMGLE3 1051-8207
21. J. P. K. Glib and C. A. Balanis, IEEE Trans. Microwave Theory Tech. 40, 2148 (1992). iem IETMAB 0018-9480
22. E. S. Tong and S. K. Chaudhuri, IEEE Trans. Microwave Theory Tech. 47, 1760 (1999). iem IETMAB 0018-9480
23. S. Chen, R. Vahldieck, and J. Huang, IEEE Trans. Microwave Theory Tech. 44, 2487 (1996). iem IETMAB 0018-9480
24. T. H. Lee and S. S. Wong, Proc. IEEE 88, 1560 (2000). iee IEEPAD 0018-9219
25. V. Milanovic, M. Gaitan, E. D. Bowen, and M. E. Zaghloul, IEEE Microwave Guid. Wave Lett. 6, 380 (1996). img IMGLE3 1051-8207
26. G. E. Ponchak, A. Margomenos, and L. P. B. Katehi, IEEE Trans. Microwave Theory Tech. 49, 866 (2001). iem IETMAB 0018-9480