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Volumn 82, Issue 1-3, 2001, Pages 59-61

p and n type doping of cubic GaN on SiC (001)

(15) Martinez Guerrero, E a Daudin, B a Feuillet, G a Mariette, H b Genuist, Y b Fanget, S c Philippe, A c Dubois, C c Bru Chevallier, C c Guillot, G c Aboughe Nze, P c Chassagne, T c Monteil, Y c Gamez Cuatzin, H d Tardy, J d

a CEA GRENOBLE (France)

b UNIV GRENOBLE ALPES (France)

c CNRS (France)

d ECOLE CENTRALE DE LYON (France)

Author keywords

Cubic GaN; n type doping; p type doping; SiC (001)

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL CORRELATION; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; STACKING FAULTS;

DEEP OPTICAL TRANSITIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933161 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00719-4 Document Type: Article

Times cited : (19)

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