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Volumn 206, Issue 1-2, 1999, Pages 150-154
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Effect of Si doping on cubic GaN films grown on GaAs(100)
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
DISLOCATIONS (CRYSTALS);
FILM GROWTH;
MATHEMATICAL MODELS;
NANOSTRUCTURED MATERIALS;
PHASE TRANSITIONS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
STACKING FAULTS;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE FILMS;
X RAY ROCKING CURVE;
YELLOW EMISSION;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0033207151
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00365-6 Document Type: Article |
Times cited : (8)
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References (18)
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