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Materials Chemistry and Physics

Volumn 73, Issue 2-3, 2002, Pages 301-305

Chemical liquid deposition of gallium nitride thin films on siloxane-anchored self-assembled monolayers

(8) Niesen, T P a,c Puchinger, M b Gerstel, P a Rodewald, D a Wolff, J a Wagner, T b Bill, J a Aldinger, F a

a UNIVERSITY OF STUTTGART (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

c SHELL GLOBAL SOLUTIONS INTERNATIONAL B V (United States)

Author keywords

Chemical liquid deposition; Gallium nitride (GaN); Precursor pyrolysis; Self assembled monolayers; Thin films

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL MICROSTRUCTURE; DEPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; MORPHOLOGY; PYROLYSIS; SAPPHIRE; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES;

CHEMICAL LIQUID DEPOSITION;

THIN FILMS;

EID: 0037081184 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(01)00393-5 Document Type: Article

Times cited : (10)

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