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Volumn 91, Issue 2, 2002, Pages 819-822

Size dependent charge storage effect of the InAs nanodots in Al0.5Ga0.5As/GaAs field-effect diodes

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE STORAGE; CHARGING EFFECT; CLOCKWISE HYSTERESIS LOOP; DOT DENSITY; DOT SIZE; ELECTRON STORAGE; FIELD-EFFECT; INAS; NANODOTS; PHOTOLUMINESCENCE PROPERTIES; RETENTION TIME; SIZE DEPENDENT; STORAGE NODES; STORED CHARGE;

EID: 0037080523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1420767     Document Type: Article
Times cited : (3)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.