Threshold voltage shift characterization of vertically stacked InAs nanodots in field-effect transistor

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1166-1170

  Li, Shuwei ^a   Koike, Kazuto ^a   Komai, Hisayoshi ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Characterization; A1. Low dimensional structures; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials; B3. Field effect transistors

Indexed keywords

CAPACITANCE MEASUREMENT; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

LOW DIMENSIONAL STRUCTURES; VERTICALLY STACKED NANODOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035399387     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01008-9     Document Type: Conference Paper

References (7)