Application of self-assembled InAs nanodots for a HEMT-type memory-effect transistor

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 106-109

  Koike, K ^a   Li, S ^a   Saitoh, K ^a   Sasa, S ^a   Inoue, M ^a   Yano, M ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM ARSENIDE; MEMORY-EFFECT FIELD-EFFECT TRANSISTOR; NANODOTS;

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033690752     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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8. K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano, Appl. Phys. Lett., in press.