Self-assembling molecular beam epitaxial growth of the InAs quantum dots embedded in deep Al0.5Ga0.5As barriers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Koike, Kazuto ^a   Ohkawa, Hiroyuki ^a   Yano, Mitsuaki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; EXCITONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

ALUMINUM GALLIUM ARSENIDE; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032652107     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l417     Document Type: Article

References (13)