Optically induced bistability in the mobility of a two-dimensional electron gas coupled to a layer of quantum dots

Applied Physics Letters

Volumn 74, Issue 5, 1999, Pages 735-737

  Shields, A J ^a   O'Sullivan, M P ^a   Farrer, I ^b   Ritchie, D A ^b   Cooper, K ^b   Foden, C L ^a   Pepper, M ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; LIGHTING; MESFET DEVICES; OPTICAL BISTABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TWO DIMENSIONAL;

ELECTRON CHANNEL; MODULATION DOPED FIELD EFFECT TRANSISTOR; OPTICAL ILLUMINATION; SCHOTTKY GATES; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033070819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123107     Document Type: Article

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