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Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 257-262

Step-bunching and strain-effects in Si1-xGex layers and Superlattices grown on vicinal Si(001)

(4) Muhlberger M a Schelling, C a Springholz, G a Schaffler F a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

Germanium; Silicon; Step bunching; Superlattice

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR SUPERLATTICES;

HOMOEPITAXIAL LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074791 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00776-0 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.