Dopant diffusion in SiGe: Modeling stress and Ge chemical effects

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 225-228

  Pakfar, A ^a,b  

^a STMICROELECTRONICS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Antimony; Diffusion; Dopant; Phosphorus; SiGe; Strain

Indexed keywords

DIFFUSION; HYDROSTATIC PRESSURE; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; STRAIN; STRESSES;

DOPANT DIFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074773     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00790-5     Document Type: Conference Paper

References (13)

1. Properties of strained and relaxed SiGe