Crack formation in III-V epilayers grown under tensile strain on InP(001) substrates

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 74, Issue 2, 1996, Pages 383-393

  Murray, R T ^a   Kiely, C J ^a   Hopkinson, M ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030208678     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619608242149     Document Type: Article

References (16)

1. Adachi, S., 1992, Physical Properties of III-V Semiconductor Compounds (New York: Wiley-Interscience), p. 23.
2. Bateman, T. B., McSkimin, H.J., and Whelan, M. J., 1959, J. appl. Phys., 30, 544.
3. Beanland, R., and Boyd, A. R., 1995, Microscopy of Semiconductor Materials, Institute of Physics Conference Series No. 146 (Bristol: Institute of Physics), p. 153.
4. Chang, S.-Z., Lee, S.-C., Chen, C. R., and Chen, L. J., 1994, J. appl. Phys., 75, 1511.
5. Cottrell, A. H., 1958, Trans. AIME, 212, 192.
6. Dunstan, D. J., Kidd, P., Howard, L. K., and Dixon, R. H., 1991, Appl. Phys. Lett., 59, 3390.
7. Franzosi, P., Salviati, G., Scaffardi, M., Genova, F., Pellegrino, S., and Stano, A., 1988, J. Cryst. Growth, 88, 135.
8. Harker, A. J., Pinardi, D., Jain, S. C., Atkinson, A., and Bullough, R., 1995, Phil. Mag. A, 71, 871.
9. Kavanagh, K. L., Capano, M. A., Hobbs, L. W., Maree, P. M. J., Schaff, W., Mayer, J. W., Pettit, D., Woodall, J. M., Stroscio, J. A., Feenstra, R. M., and Barbour, J. C., 1988, J. appl. Phys., 64, 4843.
10. Keyes, R. W., 1962, J. appl. Phys., 33, 3371.
11. Matthews, J. W., 1975, J. vac. Sci. Technol., 12, 126.
12. Matthews, J. W., and Klokholm, E., 1972, Mater. Res. Bull., 7, 213.
13. Messmer, C., and Bilello, J. G, 1981, J. appl. Phys., 52, 4623.
14. Murray, R. T., Kiely, G J., Goodhew, R J., and Hopkinson, M., 1993, Electron Microscopy and Analysis, Institute of Physics Conference Series No. 138 (Bristol: Institute of Physics), pp. 309-312.
15. Olsen, G. H., Abraham, M. S., and Zamerowski, T. J., 1974, J. electrochem. Soc., 121, 1650.
16. Tiuchiya, T., Taniwatari, T., Komori, M., TSuneta, R., and Kakibayashi, H., 1994, Jap. J. appl. Phys., 33, 230.