Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

Applied Physics Letters

Volumn 69, Issue 5, 1996, Pages 682-684

  Maigne P ^a   Gendry, M ^b   Venet, T ^b   Tahri, Y ^b,c   Hollinger, G ^b  

^a Industry Canada   (Canada)

^b ECOLE CENTRALE DE LYON   (France)

^c MOULAY ISMAIL UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008790784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117805     Document Type: Article

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