Investigation by synchrotron radiation x-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers

Journal of Crystal Growth

Volumn 205, Issue 4, 1999, Pages 474-480

  Ferrari, C ^a   Gennari, S ^b   Franchi, S ^a   Lazzarini, L ^a   Natali, M ^c   Romanato, F ^c   Drigo, A V ^c   Baruchel, J ^d  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; SYNCHROTRON RADIATION;

COMPOSITIONALLY GRADED BUFFER LAYERS; LATTICE TILT; X RAY TOPOGRAPHY;

CRYSTAL LATTICES;

EID: 0033344046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00292-4     Document Type: Article

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