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Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 330-338

Localized exciton dynamics in InGaN quantum well structures

(6) Chichibu, Shigefusa F a Azuhata, Takashi b Okumura, Hajime c Tackeuchi, Atsushi d Sota, Takayuki e Mukai, Takashi f

a UNIVERSITY OF TSUKUBA (Japan)

b HIROSAKI UNIVERSITY (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

d WASEDA UNIVERSITY (Japan)

e Electronics and Computer Engineering ^* (Japan)

f NICHIA CORPORATION (Japan)

Author keywords

Cubic InGan; Exciton dynamic; InGaN; Localized exciton

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; EXCITONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITON DYNAMICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037042033 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00907-2 Document Type: Article

Times cited : (12)

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