Capacitance-voltage characteristic of anisotype heterojunction in the presence of interface states and series resistance

Applied Surface Science

Volumn 171, Issue 3-4, 2001, Pages 207-212

  Chattopadhyay, P ^a   Haldar, D P ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ANISOTYPE HETEROJUNCTIONS; CAPACITANCE VOLTAGE CHARACTERISTICS;

HETEROJUNCTIONS;

EID: 0035252194     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00705-4     Document Type: Article

References (17)

1. Chattopadhyay P., Haldar D.P. Appl. Surface Sci. 143:1999;287.
2. Tersoff J. Phys. Rev. Lett. 52:1984;465.
3. Tersoff J. Phys. Rev. B. 30:1984;4874.
4. Tersoff J. Phys. Rev. B. 32:1985;6968.
5. Anderson R.L. Solid State Electron. 5:1962;341.
6. Donnelly J.P., Milnes A.G. IEEE. Trans. Electron. Dev. Ed. 14:1967;63.
7. Hall R.B., Singh V.P. J. Appl. Phys. 50:1979;6406.
8. Hmurcik L., Ketelsen L., Serway R.A. J. Appl. Phys. 53:1982;3839.
9. Kamjoo K., Nayak D.K., Park J.S., Woo J.C.S., Wang K.L. J. Appl. Phys. 69:1991;6674.
10. Unlu M.S., Strite S., Gao G.B., Adomi K., Morkoc H. Appl. Phys. Lett. 56:1990;842.
11. Milnes A.G. Solid State Electron. 29:1986;99.
12. Card H.C. J. Appl. Phys. 50:1979;2822.
13. Ho P.S., Yang E.S., Evans H.L., Wu X. Phys. Dev. Lett. 56:1986;177.
14. Werner J., Levi A.F., Tung R.T., Anzlowar M., Pinto M. Phys. Dev. Lett. 60:1988;53.
15. Chattopadhyay P., RayChaudhuri B. Solid State Electron. 35:1992;875.
16. Chattopadhyay P., RayChaudhuri B. Solid State Electron. 35:1992;1023.
17. Chattopadhyay P., RayChaudhuri B. Solid State Electron. 36:1993;605.